This material is for InP single crystal growth. For long-term deliveries, the diameter of the ingot can be specified by the client.
Synthesized by VGF method.
Diameter: 107 mm
Weight: 5 kg
Carrier concentration nH: 4E15 – 1E16 [cm-3]
Mobility μH: 3800 – 4300 [cm2 V-1 s-1]
Contact us to receive more information about Indium Phosphide from PHOSTEC.
Parts made of PBN can serve as self-supporting in aggressive chemical environments. Not destructure till high temperature.
Crucibles made of PG are suitable for PG grids needed to control electron and ion beams.